Characteristics of MOS-controlled thyristors under zero voltage soft-sw-ing conditions

MOS-controlled thyristor (MCT) characterizations, as they relate to their dynamic performance during zero voltage switching, are reviewed. A test circuit that enables characterization of the zero voltage turn-on and turn-off losses of the device is described. Behavior models are presented and evalua...

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Hauptverfasser: De Doncker, R.W., Jahns, T.M., Radun, A.V., Watrous, D.L., Temple, V.A.K.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:MOS-controlled thyristor (MCT) characterizations, as they relate to their dynamic performance during zero voltage switching, are reviewed. A test circuit that enables characterization of the zero voltage turn-on and turn-off losses of the device is described. Behavior models are presented and evaluated to predict the MCT turn-off losses under various soft-switching conditions. These models are shown to be useful for optimizing device performance in high frequency soft-switching converters.< >
DOI:10.1109/IAS.1990.152400