Characteristics of MOS-controlled thyristors under zero voltage soft-sw-ing conditions
MOS-controlled thyristor (MCT) characterizations, as they relate to their dynamic performance during zero voltage switching, are reviewed. A test circuit that enables characterization of the zero voltage turn-on and turn-off losses of the device is described. Behavior models are presented and evalua...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | MOS-controlled thyristor (MCT) characterizations, as they relate to their dynamic performance during zero voltage switching, are reviewed. A test circuit that enables characterization of the zero voltage turn-on and turn-off losses of the device is described. Behavior models are presented and evaluated to predict the MCT turn-off losses under various soft-switching conditions. These models are shown to be useful for optimizing device performance in high frequency soft-switching converters.< > |
---|---|
DOI: | 10.1109/IAS.1990.152400 |