Electron transport in heterostructures AlGaN/GaN doped with silicon

The aim of the present study was the comparison of the electron transport in vertical AlGaN/GaN heterostructures with different doping level of AlGaN layer. It was found the current oscillations as a function of applied voltage in the case of heterostructures with the high doping level of AlGaN laye...

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Bibliographische Detailangaben

Hauptverfasser:	Latyshev, A.N., Antonova, I.V.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Capacitance measurement Capacitance-voltage characteristics Doping Electrons Gallium nitride Silicon Temperature distribution Temperature measurement Voltage
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