Electron transport in heterostructures AlGaN/GaN doped with silicon

The aim of the present study was the comparison of the electron transport in vertical AlGaN/GaN heterostructures with different doping level of AlGaN layer. It was found the current oscillations as a function of applied voltage in the case of heterostructures with the high doping level of AlGaN layer. The current-voltage and capacitance-voltage characteristics were measured in the temperature range of 80-400 K. Two types of AlGaN/GaN heterostructures were used for study: (1) undoped heterostructures (structures of A type); and (2) heterostructures with doped AlGaN layer (structures B type). Current in vertical AlGaN/GaN heterostructures are not practically depended on temperature in the range of 80-300K.