Electron transport in heterostructures AlGaN/GaN doped with silicon
The aim of the present study was the comparison of the electron transport in vertical AlGaN/GaN heterostructures with different doping level of AlGaN layer. It was found the current oscillations as a function of applied voltage in the case of heterostructures with the high doping level of AlGaN laye...
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| creator | Latyshev, A.N. Antonova, I.V. |
| description | The aim of the present study was the comparison of the electron transport in vertical AlGaN/GaN heterostructures with different doping level of AlGaN layer. It was found the current oscillations as a function of applied voltage in the case of heterostructures with the high doping level of AlGaN layer. The current-voltage and capacitance-voltage characteristics were measured in the temperature range of 80-400 K. Two types of AlGaN/GaN heterostructures were used for study: (1) undoped heterostructures (structures of A type); and (2) heterostructures with doped AlGaN layer (structures B type). Current in vertical AlGaN/GaN heterostructures are not practically depended on temperature in the range of 80-300K. |
| doi_str_mv | 10.1109/SIBEDM.2005.195577 |
| format | Conference Proceeding |
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It was found the current oscillations as a function of applied voltage in the case of heterostructures with the high doping level of AlGaN layer. The current-voltage and capacitance-voltage characteristics were measured in the temperature range of 80-400 K. Two types of AlGaN/GaN heterostructures were used for study: (1) undoped heterostructures (structures of A type); and (2) heterostructures with doped AlGaN layer (structures B type). Current in vertical AlGaN/GaN heterostructures are not practically depended on temperature in the range of 80-300K.</description><identifier>ISSN: 1815-3712</identifier><identifier>ISBN: 5778204914</identifier><identifier>ISBN: 9785778204911</identifier><identifier>DOI: 10.1109/SIBEDM.2005.195577</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum gallium nitride ; Capacitance measurement ; Capacitance-voltage characteristics ; Doping ; Electrons ; Gallium nitride ; Silicon ; Temperature distribution ; Temperature measurement ; Voltage</subject><ispartof>Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005, 2005, p.39-40</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1523182$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4048,4049,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1523182$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Latyshev, A.N.</creatorcontrib><creatorcontrib>Antonova, I.V.</creatorcontrib><title>Electron transport in heterostructures AlGaN/GaN doped with silicon</title><title>Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005</title><addtitle>SIBEDM</addtitle><description>The aim of the present study was the comparison of the electron transport in vertical AlGaN/GaN heterostructures with different doping level of AlGaN layer. It was found the current oscillations as a function of applied voltage in the case of heterostructures with the high doping level of AlGaN layer. The current-voltage and capacitance-voltage characteristics were measured in the temperature range of 80-400 K. Two types of AlGaN/GaN heterostructures were used for study: (1) undoped heterostructures (structures of A type); and (2) heterostructures with doped AlGaN layer (structures B type). Current in vertical AlGaN/GaN heterostructures are not practically depended on temperature in the range of 80-300K.</description><subject>Aluminum gallium nitride</subject><subject>Capacitance measurement</subject><subject>Capacitance-voltage characteristics</subject><subject>Doping</subject><subject>Electrons</subject><subject>Gallium nitride</subject><subject>Silicon</subject><subject>Temperature distribution</subject><subject>Temperature measurement</subject><subject>Voltage</subject><issn>1815-3712</issn><isbn>5778204914</isbn><isbn>9785778204911</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjNFKwzAYRgMqOOdeQG_yAu3yJ82SXM66zcHUC_V6pMlfFqltSTLEt7egH5xz7j5C7oCVAMws3_YPm8fnkjMmSzBSKnVBbiZrzioD1SWZgQZZCAX8mixS-mTThKmEgRmpNx26HIee5mj7NA4x09DTE2aMQ8rx7PI5YqLrbmdflhPUDyN6-h3yiabQBTf0t-SqtV3CxX_n5GO7ea-fisPrbl-vD0UAJXPRiKZaIdcWPTZWW9UqVYHW2nvnnUXFtDeM26ZtUBnTIK4c91IgilZa4GJO7v9-AyIexxi-bPw5guQCNBe_2_dMzA</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Latyshev, A.N.</creator><creator>Antonova, I.V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>Electron transport in heterostructures AlGaN/GaN doped with silicon</title><author>Latyshev, A.N. ; Antonova, I.V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-b3b46e28aedeba8a7f7741888ddcdcae708d902abfbe799bee6c2d53ee3f5a123</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Aluminum gallium nitride</topic><topic>Capacitance measurement</topic><topic>Capacitance-voltage characteristics</topic><topic>Doping</topic><topic>Electrons</topic><topic>Gallium nitride</topic><topic>Silicon</topic><topic>Temperature distribution</topic><topic>Temperature measurement</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Latyshev, A.N.</creatorcontrib><creatorcontrib>Antonova, I.V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Latyshev, A.N.</au><au>Antonova, I.V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electron transport in heterostructures AlGaN/GaN doped with silicon</atitle><btitle>Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005</btitle><stitle>SIBEDM</stitle><date>2005</date><risdate>2005</risdate><spage>39</spage><epage>40</epage><pages>39-40</pages><issn>1815-3712</issn><isbn>5778204914</isbn><isbn>9785778204911</isbn><abstract>The aim of the present study was the comparison of the electron transport in vertical AlGaN/GaN heterostructures with different doping level of AlGaN layer. It was found the current oscillations as a function of applied voltage in the case of heterostructures with the high doping level of AlGaN layer. The current-voltage and capacitance-voltage characteristics were measured in the temperature range of 80-400 K. Two types of AlGaN/GaN heterostructures were used for study: (1) undoped heterostructures (structures of A type); and (2) heterostructures with doped AlGaN layer (structures B type). Current in vertical AlGaN/GaN heterostructures are not practically depended on temperature in the range of 80-300K.</abstract><pub>IEEE</pub><doi>10.1109/SIBEDM.2005.195577</doi><tpages>2</tpages></addata></record> |
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| issn | 1815-3712 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum gallium nitride Capacitance measurement Capacitance-voltage characteristics Doping Electrons Gallium nitride Silicon Temperature distribution Temperature measurement Voltage |
| title | Electron transport in heterostructures AlGaN/GaN doped with silicon |
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