Observation of an anomalous minority carrier trap in n-type InGaAs

Observation of an anomalous minority carrier trap in n-type InGaAs

Temperature-dependent transient capacitance spectroscopy has revealed a deep hole trap in n-type In 0.53 Ga 0.47 As. Thermal activation and tunneling across the p + n junction are used to explain the unusual capture and escape mechanisms of this trap

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Bibliographische Detailangaben
Hauptverfasser: Gfroerer, T.H., Simov, K.R., Wanlass, M.W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Delay
Filling
Indium gallium arsenide
Indium phosphide
Spectroscopy
Steady-state
Temperature
Tunneling
Zinc
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Beschreibung
Zusammenfassung:Temperature-dependent transient capacitance spectroscopy has revealed a deep hole trap in n-type In 0.53 Ga 0.47 As. Thermal activation and tunneling across the p + n junction are used to explain the unusual capture and escape mechanisms of this trap
ISSN:1092-8669
DOI:10.1109/ICIPRM.2005.1517581