Volume manufacturing of 0.6 eV bandgap thermophotovoltaic devices on InAsP lattice mismatched buffers by MBE

Volume manufacturing of 0.6 eV bandgap thermophotovoltaic devices on InAsP lattice mismatched buffers by MBE

We report on scaling high efficiency In/sub 0.68/Ga/sub 0.32/As thermophotovoltaic devices on InP from a single wafer research reactor to a 7/spl times/3" production reactor utilizing step-graded InAs/sub y/P/sub (1-y)/ lattice mismatched buffers. We'll present uniformity, reproducibility...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Bird, T.E., Sheldon, M., Bresnahan, R.C., O'Steen, M.L., Gotthold, D.W., Wernsman, B., Link, S.D., Messham, R.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Birds
Gallium arsenide
Indium gallium arsenide
Indium phosphide
Inductors
Lattices
Manufacturing
Photonic band gap
Production
Substrates
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on scaling high efficiency In/sub 0.68/Ga/sub 0.32/As thermophotovoltaic devices on InP from a single wafer research reactor to a 7/spl times/3" production reactor utilizing step-graded InAs/sub y/P/sub (1-y)/ lattice mismatched buffers. We'll present uniformity, reproducibility and device results.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2005.1517429