W-band metamorphic HEMT with 267 mW output power

W-band metamorphic HEMT with 267 mW output power

This paper reports the highest W-band power output of metamorphic HEMT (MHEMT) technology to date. 267 mW single stage performances at 90 GHz are achieved on a 0.15 micron GaAs-based production line with improved manufacturability over InP HEMT. The single stage circuits presented here are building...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Herrick, K.J., Brown, K.W., Rose, F.A., Whelan, C.S., Kotce, J., Laroche, J.R., Yiwen Zhang
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Etching
Gallium arsenide
Gold
HEMTs
Indium phosphide
mHEMTs
Millimeter wave technology
Power amplifiers
Power generation
Substrates
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper reports the highest W-band power output of metamorphic HEMT (MHEMT) technology to date. 267 mW single stage performances at 90 GHz are achieved on a 0.15 micron GaAs-based production line with improved manufacturability over InP HEMT. The single stage circuits presented here are building blocks for future MHEMT power amplifier development.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2005.1516748