35 GHz bandwidth germanium-on-silicon photodetector

A 3 dB bandwidth of 35 GHz at 1.31 /spl mu/m and 1.55 /spl mu/m wavelengths is reported for inter-digited germanium on silicon-on-insulator metal-semiconductor-metal photodetector with finger spacing of 500 nm.

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Bibliographische Detailangaben
Hauptverfasser:	Rouvtere, M., Fedeli, J.-M., Damlencourt, J.-F., Hartmann, J.M., Kolev, S., Vivien, L., Le Roux, X., Mangeney, J., Crozat, P., Hoarau, C., Cassan, E., Pascal, D., Laval, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Absorption Bandwidth Electrodes Fingers Frequency measurement Germanium High speed optical techniques Optical films Photodetectors Silicon on insulator technology
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Beschreibung
Zusammenfassung:	A 3 dB bandwidth of 35 GHz at 1.31 /spl mu/m and 1.55 /spl mu/m wavelengths is reported for inter-digited germanium on silicon-on-insulator metal-semiconductor-metal photodetector with finger spacing of 500 nm.
ISSN:	1949-2081 1949-209X
DOI:	10.1109/GROUP4.2005.1516443