Deep centers in conductive and semi-insulating GaN

Deep centers in conductive and semi-insulating GaN

Unintentionally doped conductive and carbon doped semi-insulating GaN films have been characterized by deep level transient spectroscopy, thermally stimulated current spectroscopy, and photoluminescence (PL). Based on correlations with dislocation density, point defects created by electron irradiati...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Zhaoqiang Fang, Farlow, G., Claflin, B., Look, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Conductive films
Electron traps
Epitaxial growth
Gallium nitride
MOCVD
Molecular beam epitaxial growth
Photoluminescence
Semiconductor films
Spectroscopy
Thermal conductivity
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Unintentionally doped conductive and carbon doped semi-insulating GaN films have been characterized by deep level transient spectroscopy, thermally stimulated current spectroscopy, and photoluminescence (PL). Based on correlations with dislocation density, point defects created by electron irradiation, and deep PL bands, the major traps in GaN can be tentatively associated with N vacancies, Ga vacancies, and N interstitials.
DOI:10.1109/SIM.2005.1511379