Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam

Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam

In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam (HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Co...

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Hauptverfasser: Li Jian Feng, Makeev, V.A., Remnev, G.E., Guselnikov, V.I., Saltemakov, M.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic force microscopy
Atomic layer deposition
Gallium arsenide
Ion beams
Plasma x-ray sources
Scanning electron microscopy
Sputtering
Transistors
X-ray diffraction
X-ray scattering
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Zusammenfassung:In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam (HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Composition and structure of film were investigated by methods X-ray diffraction (XRD), Rutherford back scattering (RBS), atomic force microscopy (AFM) and scanning electron microscope investigation (SEM) defined surface morphology of thin film GaAs.
DOI:10.1109/KORUS.2005.1507765