Monte Carlo characterization of fabricated partially-depleted SOI MOSFETs: high-frequency performance

This paper addresses a Monte Carlo (MC) investigation of fabricated partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. Numerical results show a good agreement to the main high-frequency figures of merit of the transistor, providing at the same time an advanced understanding of the electronic charge transport processes by means of the main internal quantities of interest. The excellent performance of the devices investigated (with NF/sub min/ of 0.4 dB at 6 GHz) makes them feasible candidates to be used in RF and microwave analog applications.