Modelling of new SiGeC HBTs

Addition of carbon in the base layer of SiGe HBTs has been reported as an effective way to achieve high-performance devices. This paper models SiGeC HBTs comparing DC and AC electrical characteristics, with and without carbon, using commercial numerical device simulator ATLAS.

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Bibliographische Detailangaben
Hauptverfasser:	Nunez, J.M., Lopez-Gonzalez, J.M., Garcia-Loureiro, A.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Carbon dioxide Charge carrier lifetime Conducting materials Doping profiles Germanium silicon alloys Heterojunction bipolar transistors Numerical simulation Photonic band gap Semiconductor process modeling Silicon germanium
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Beschreibung
Zusammenfassung:	Addition of carbon in the base layer of SiGe HBTs has been reported as an effective way to achieve high-performance devices. This paper models SiGeC HBTs comparing DC and AC electrical characteristics, with and without carbon, using commercial numerical device simulator ATLAS.
ISSN:	2163-4971 2643-1300
DOI:	10.1109/SCED.2005.1504349