Characterization of oxygen related defects in silicon p-n junctions

One of the levels that is frequently detected in Czochralski-grown silicon (Cz-Si) by different authors is analyzed in a p-n/sup +/ junction at low and room temperatures for different bias conditions. We examine the results from different experimental techniques, usually employed to extract parameters in p-n junctions, to acquire a better understanding of the electrical activity of oxygen in Cz-Si. The reason of studying these results is because different electrical conditions during the characterization of identical samples can lead to contradictory conclusions. In order to link these disparate results we show how one of the oxygen related defects can act as a hole trap or as an electron trap at different temperatures.