ZrO2 Gate Dielectrics Prepared by E-beam Deposition of Zr and YSZ Films and Post Annealing Processes

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Hauptverfasser: Johansson, M., Yousif, M.Y.A., Sareen, A., Lundgren, P., Bengtsson, S., Sodervall, U.
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creator Johansson, M.
Yousif, M.Y.A.
Sareen, A.
Lundgren, P.
Bengtsson, S.
Sodervall, U.
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doi_str_mv 10.1109/ESSDERC.2002.194957
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Annealing
Applied sciences
Compound structure devices
Dielectrics
Electronics
Exact sciences and technology
Materials
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Zirconium
title ZrO2 Gate Dielectrics Prepared by E-beam Deposition of Zr and YSZ Films and Post Annealing Processes
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