Noise Characterization of InP Based Heterojunction Bipolar Transistor at Microwave Frequencies
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 411 |
|---|---|
| container_issue | |
| container_start_page | 408 |
| container_title | |
| container_volume | |
| creator | Danelon, V. Aniel, F. Riet, M. Crozat, P. Vernet, G. Adde, R. |
| description | |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1503575</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1503575</ieee_id><sourcerecordid>1503575</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-b1e705fb3311230cf9df1b0b343dcc2e09d4a8d2481dea77a1c84d5218ded7123</originalsourceid><addsrcrecordid>eNotjNFKwzAUQAMiTGa_wJf8QCE3aZr00RXnBnP60GfHbXLLMmYzk07Rr3eoT-fhcM4VKxpjpa2VklJVesaKnA9CCGhqWwPcsNdtDJl4u8eEbqIUvnEKceRx4OvxhS8wk-cruph4OI_u1y3CKR4x8S7hmEOeYuI48afgUvzED-LLRO9nGl2gfMuuBzxmKv45Z93yoWtX5eb5cd3eb8rQiKnsgYzQQ68UgFTCDY0foBe9qpR3TpJofIXWy8qCJzQGwdnKawnWkzeXZM7u_raBiHanFN4wfe1AC6WNVj9cQU5V</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Noise Characterization of InP Based Heterojunction Bipolar Transistor at Microwave Frequencies</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Danelon, V. ; Aniel, F. ; Riet, M. ; Crozat, P. ; Vernet, G. ; Adde, R.</creator><creatorcontrib>Danelon, V. ; Aniel, F. ; Riet, M. ; Crozat, P. ; Vernet, G. ; Adde, R.</creatorcontrib><identifier>ISBN: 9782863322345</identifier><identifier>ISBN: 2863322346</identifier><language>eng</language><publisher>Editions Frontieres</publisher><subject>Bipolar transistors ; Heterojunction bipolar transistors ; Indium phosphide ; Microwave frequencies ; Microwave transistors ; Noise figure ; Noise measurement ; Performance evaluation ; Semiconductor device noise ; Testing</subject><ispartof>28th European Solid-State Device Research Conference, 1998, p.408-411</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1503575$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1503575$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Danelon, V.</creatorcontrib><creatorcontrib>Aniel, F.</creatorcontrib><creatorcontrib>Riet, M.</creatorcontrib><creatorcontrib>Crozat, P.</creatorcontrib><creatorcontrib>Vernet, G.</creatorcontrib><creatorcontrib>Adde, R.</creatorcontrib><title>Noise Characterization of InP Based Heterojunction Bipolar Transistor at Microwave Frequencies</title><title>28th European Solid-State Device Research Conference</title><addtitle>ESSDERC</addtitle><subject>Bipolar transistors</subject><subject>Heterojunction bipolar transistors</subject><subject>Indium phosphide</subject><subject>Microwave frequencies</subject><subject>Microwave transistors</subject><subject>Noise figure</subject><subject>Noise measurement</subject><subject>Performance evaluation</subject><subject>Semiconductor device noise</subject><subject>Testing</subject><isbn>9782863322345</isbn><isbn>2863322346</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjNFKwzAUQAMiTGa_wJf8QCE3aZr00RXnBnP60GfHbXLLMmYzk07Rr3eoT-fhcM4VKxpjpa2VklJVesaKnA9CCGhqWwPcsNdtDJl4u8eEbqIUvnEKceRx4OvxhS8wk-cruph4OI_u1y3CKR4x8S7hmEOeYuI48afgUvzED-LLRO9nGl2gfMuuBzxmKv45Z93yoWtX5eb5cd3eb8rQiKnsgYzQQ68UgFTCDY0foBe9qpR3TpJofIXWy8qCJzQGwdnKawnWkzeXZM7u_raBiHanFN4wfe1AC6WNVj9cQU5V</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Danelon, V.</creator><creator>Aniel, F.</creator><creator>Riet, M.</creator><creator>Crozat, P.</creator><creator>Vernet, G.</creator><creator>Adde, R.</creator><general>Editions Frontieres</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1998</creationdate><title>Noise Characterization of InP Based Heterojunction Bipolar Transistor at Microwave Frequencies</title><author>Danelon, V. ; Aniel, F. ; Riet, M. ; Crozat, P. ; Vernet, G. ; Adde, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-b1e705fb3311230cf9df1b0b343dcc2e09d4a8d2481dea77a1c84d5218ded7123</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Bipolar transistors</topic><topic>Heterojunction bipolar transistors</topic><topic>Indium phosphide</topic><topic>Microwave frequencies</topic><topic>Microwave transistors</topic><topic>Noise figure</topic><topic>Noise measurement</topic><topic>Performance evaluation</topic><topic>Semiconductor device noise</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Danelon, V.</creatorcontrib><creatorcontrib>Aniel, F.</creatorcontrib><creatorcontrib>Riet, M.</creatorcontrib><creatorcontrib>Crozat, P.</creatorcontrib><creatorcontrib>Vernet, G.</creatorcontrib><creatorcontrib>Adde, R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Danelon, V.</au><au>Aniel, F.</au><au>Riet, M.</au><au>Crozat, P.</au><au>Vernet, G.</au><au>Adde, R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Noise Characterization of InP Based Heterojunction Bipolar Transistor at Microwave Frequencies</atitle><btitle>28th European Solid-State Device Research Conference</btitle><stitle>ESSDERC</stitle><date>1998</date><risdate>1998</risdate><spage>408</spage><epage>411</epage><pages>408-411</pages><isbn>9782863322345</isbn><isbn>2863322346</isbn><pub>Editions Frontieres</pub><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9782863322345 |
| ispartof | 28th European Solid-State Device Research Conference, 1998, p.408-411 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_1503575 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Bipolar transistors Heterojunction bipolar transistors Indium phosphide Microwave frequencies Microwave transistors Noise figure Noise measurement Performance evaluation Semiconductor device noise Testing |
| title | Noise Characterization of InP Based Heterojunction Bipolar Transistor at Microwave Frequencies |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T14%3A04%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Noise%20Characterization%20of%20InP%20Based%20Heterojunction%20Bipolar%20Transistor%20at%20Microwave%20Frequencies&rft.btitle=28th%20European%20Solid-State%20Device%20Research%20Conference&rft.au=Danelon,%20V.&rft.date=1998&rft.spage=408&rft.epage=411&rft.pages=408-411&rft.isbn=9782863322345&rft.isbn_list=2863322346&rft_id=info:doi/&rft_dat=%3Cieee_6IE%3E1503575%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1503575&rfr_iscdi=true |