Multi-band stabilization of CS and CG MESFETs using series and shunt networks

Different techniques to achieve multi-band unconditional stability for GaAs MESFET transistor are introduced. Analytical formulation based on evaluating the stability parameters as a function of the transistor model elements is provided, together, with two methods to accurately estimate the values needed for the multi-band stability. The technique is applied to common source and common gate configurations. Both were monolithically fabricated and tested, and very good agreement between the predicted and measured results is obtained