The Vth controllability of 5nm body-tied CMOS FinFET

The Vth controllability of 5nm body-tied CMOS FinFET

In this paper, we demonstrate a 5nm width body-tied CMOS finFET on bulk Si for the first time. Also the threshold voltage control of the 5nm finFET is shown by using channel and pocket doping profile optimization along the narrow active fin. The excellent performance of finFET such as an excellent s...

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Hauptverfasser: Hye Jin Cho, Jeong Dong Choe, Jeongnam Han, Dongchan Kim, Heungsik Park, Doohoon Goo, Ming Li, Chang Woo Oh, Dong-Won Kim, Tae Yong Kim, Choong-Ho Lee, Donggun Park, Kinam Kim, Byung-Il Ryu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS process
CMOS technology
Controllability
Doping
FinFETs
Immune system
Manufacturing processes
MOS devices
Threshold voltage
Voltage control
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Beschreibung
Zusammenfassung:In this paper, we demonstrate a 5nm width body-tied CMOS finFET on bulk Si for the first time. Also the threshold voltage control of the 5nm finFET is shown by using channel and pocket doping profile optimization along the narrow active fin. The excellent performance of finFET such as an excellent subthreshold swing (SS), and drain induced barrier lowering (DIBL) characteristics were found. And the systemic analyses of electrical characteristics dependencies on the fin width were evaluated for various fin width (5 /spl sim/ 100nm).
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2005.1497103