High mobility solution-deposited chalcogenide films for flexible applications
The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm/sup 2//V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogen...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 44 |
---|---|
container_issue | |
container_start_page | 41 |
container_title | |
container_volume | |
creator | Mitzi, D.B. Milliron, D.J. Copel, M. Murray, C. Kosbar, L. |
description | The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm/sup 2//V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogenide films. Ultrathin n-type SnSe/sub 2-x/S/sub x/, In/sub 2/Se/sub 3/ and p-type CuInSe/sub 2-x/S/sub x/ TFT channels have been deposited by spin coating from hydrazine- and nonhydrazine-based solutions, yielding saturation regime field-effect mobilities and on-off ratios as high as 16 cm/sup 2//V-s and 10/sup 6/, respectively. The new deposition technique is expected to be extendable to a wider range of metal chalcogenides, offering opportunities for TFTs as well as other thin-film devices, including solar cells, memory and thermoelectric devices. |
doi_str_mv | 10.1109/VTSA.2005.1497075 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1497075</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1497075</ieee_id><sourcerecordid>1497075</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-a5486bd1458eec3cb77e3b7533429056bcfb88adfb2188f89563bd5b159083203</originalsourceid><addsrcrecordid>eNotkMtKAzEYRoMXsK0-gLjJC8z45zbJLEtRK1RcWKW7kmT-tJFMZ5iMYN9exa6-1TkcPkJuGZSMQX3_sX6blxxAlUzWGrQ6IxNe1VAYpuU5mYI2IGpQZnNBJkxxWeiq2lyRac6fAByU0BPysoy7PW07F1McjzR36WuM3aFosO9yHLGhfm-T73Z4iA3SEFObaegGGhJ-R5eQ2r5P0ds_Kl-Ty2BTxpvTzsj748N6sSxWr0_Pi_mqiEyrsbBKmso1TCqD6IV3WqNwWgkh-W9w5XxwxtgmOM6MCaZWlXCNckzVYAQHMSN3_96IiNt-iK0djtvTDeIHy1xQiA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>High mobility solution-deposited chalcogenide films for flexible applications</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Mitzi, D.B. ; Milliron, D.J. ; Copel, M. ; Murray, C. ; Kosbar, L.</creator><creatorcontrib>Mitzi, D.B. ; Milliron, D.J. ; Copel, M. ; Murray, C. ; Kosbar, L.</creatorcontrib><description>The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm/sup 2//V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogenide films. Ultrathin n-type SnSe/sub 2-x/S/sub x/, In/sub 2/Se/sub 3/ and p-type CuInSe/sub 2-x/S/sub x/ TFT channels have been deposited by spin coating from hydrazine- and nonhydrazine-based solutions, yielding saturation regime field-effect mobilities and on-off ratios as high as 16 cm/sup 2//V-s and 10/sup 6/, respectively. The new deposition technique is expected to be extendable to a wider range of metal chalcogenides, offering opportunities for TFTs as well as other thin-film devices, including solar cells, memory and thermoelectric devices.</description><identifier>ISSN: 1524-766X</identifier><identifier>ISBN: 078039058X</identifier><identifier>ISBN: 9780780390584</identifier><identifier>EISSN: 2690-8174</identifier><identifier>DOI: 10.1109/VTSA.2005.1497075</identifier><language>eng</language><publisher>IEEE</publisher><subject>Coatings ; Fabrication ; Logic arrays ; Photovoltaic cells ; Semiconductivity ; Semiconductor films ; Semiconductor thin films ; Sensor arrays ; Substrates ; Thin film transistors</subject><ispartof>IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech), 2005, p.41-44</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1497075$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,782,786,791,792,2060,4052,4053,27932,54927</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1497075$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mitzi, D.B.</creatorcontrib><creatorcontrib>Milliron, D.J.</creatorcontrib><creatorcontrib>Copel, M.</creatorcontrib><creatorcontrib>Murray, C.</creatorcontrib><creatorcontrib>Kosbar, L.</creatorcontrib><title>High mobility solution-deposited chalcogenide films for flexible applications</title><title>IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)</title><addtitle>VTSA</addtitle><description>The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm/sup 2//V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogenide films. Ultrathin n-type SnSe/sub 2-x/S/sub x/, In/sub 2/Se/sub 3/ and p-type CuInSe/sub 2-x/S/sub x/ TFT channels have been deposited by spin coating from hydrazine- and nonhydrazine-based solutions, yielding saturation regime field-effect mobilities and on-off ratios as high as 16 cm/sup 2//V-s and 10/sup 6/, respectively. The new deposition technique is expected to be extendable to a wider range of metal chalcogenides, offering opportunities for TFTs as well as other thin-film devices, including solar cells, memory and thermoelectric devices.</description><subject>Coatings</subject><subject>Fabrication</subject><subject>Logic arrays</subject><subject>Photovoltaic cells</subject><subject>Semiconductivity</subject><subject>Semiconductor films</subject><subject>Semiconductor thin films</subject><subject>Sensor arrays</subject><subject>Substrates</subject><subject>Thin film transistors</subject><issn>1524-766X</issn><issn>2690-8174</issn><isbn>078039058X</isbn><isbn>9780780390584</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtKAzEYRoMXsK0-gLjJC8z45zbJLEtRK1RcWKW7kmT-tJFMZ5iMYN9exa6-1TkcPkJuGZSMQX3_sX6blxxAlUzWGrQ6IxNe1VAYpuU5mYI2IGpQZnNBJkxxWeiq2lyRac6fAByU0BPysoy7PW07F1McjzR36WuM3aFosO9yHLGhfm-T73Z4iA3SEFObaegGGhJ-R5eQ2r5P0ds_Kl-Ty2BTxpvTzsj748N6sSxWr0_Pi_mqiEyrsbBKmso1TCqD6IV3WqNwWgkh-W9w5XxwxtgmOM6MCaZWlXCNckzVYAQHMSN3_96IiNt-iK0djtvTDeIHy1xQiA</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Mitzi, D.B.</creator><creator>Milliron, D.J.</creator><creator>Copel, M.</creator><creator>Murray, C.</creator><creator>Kosbar, L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2005</creationdate><title>High mobility solution-deposited chalcogenide films for flexible applications</title><author>Mitzi, D.B. ; Milliron, D.J. ; Copel, M. ; Murray, C. ; Kosbar, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-a5486bd1458eec3cb77e3b7533429056bcfb88adfb2188f89563bd5b159083203</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Coatings</topic><topic>Fabrication</topic><topic>Logic arrays</topic><topic>Photovoltaic cells</topic><topic>Semiconductivity</topic><topic>Semiconductor films</topic><topic>Semiconductor thin films</topic><topic>Sensor arrays</topic><topic>Substrates</topic><topic>Thin film transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Mitzi, D.B.</creatorcontrib><creatorcontrib>Milliron, D.J.</creatorcontrib><creatorcontrib>Copel, M.</creatorcontrib><creatorcontrib>Murray, C.</creatorcontrib><creatorcontrib>Kosbar, L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mitzi, D.B.</au><au>Milliron, D.J.</au><au>Copel, M.</au><au>Murray, C.</au><au>Kosbar, L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High mobility solution-deposited chalcogenide films for flexible applications</atitle><btitle>IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)</btitle><stitle>VTSA</stitle><date>2005</date><risdate>2005</risdate><spage>41</spage><epage>44</epage><pages>41-44</pages><issn>1524-766X</issn><eissn>2690-8174</eissn><isbn>078039058X</isbn><isbn>9780780390584</isbn><abstract>The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm/sup 2//V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogenide films. Ultrathin n-type SnSe/sub 2-x/S/sub x/, In/sub 2/Se/sub 3/ and p-type CuInSe/sub 2-x/S/sub x/ TFT channels have been deposited by spin coating from hydrazine- and nonhydrazine-based solutions, yielding saturation regime field-effect mobilities and on-off ratios as high as 16 cm/sup 2//V-s and 10/sup 6/, respectively. The new deposition technique is expected to be extendable to a wider range of metal chalcogenides, offering opportunities for TFTs as well as other thin-film devices, including solar cells, memory and thermoelectric devices.</abstract><pub>IEEE</pub><doi>10.1109/VTSA.2005.1497075</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 1524-766X |
ispartof | IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech), 2005, p.41-44 |
issn | 1524-766X 2690-8174 |
language | eng |
recordid | cdi_ieee_primary_1497075 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Coatings Fabrication Logic arrays Photovoltaic cells Semiconductivity Semiconductor films Semiconductor thin films Sensor arrays Substrates Thin film transistors |
title | High mobility solution-deposited chalcogenide films for flexible applications |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T06%3A58%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=High%20mobility%20solution-deposited%20chalcogenide%20films%20for%20flexible%20applications&rft.btitle=IEEE%20VLSI-TSA%20International%20Symposium%20on%20VLSI%20Technology,%202005.%20(VLSI-TSA-Tech)&rft.au=Mitzi,%20D.B.&rft.date=2005&rft.spage=41&rft.epage=44&rft.pages=41-44&rft.issn=1524-766X&rft.eissn=2690-8174&rft.isbn=078039058X&rft.isbn_list=9780780390584&rft_id=info:doi/10.1109/VTSA.2005.1497075&rft_dat=%3Cieee_6IE%3E1497075%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1497075&rfr_iscdi=true |