Stability of wafer level vacuum encapsulated single-crystal silicon resonators

The stability of wafer level vacuum encapsulated micromechanical resonators is characterized. The resonators are etched of silicon-on-insulator (SOI) wafers using deep reactive ion etching (DRIE) and encapsulated with anodic bonding. Bulk acoustic wave (BAW) resonators show drift better than 0.1 ppm...

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Bibliographische Detailangaben
Hauptverfasser:	Kaajakari, V., Kiihamaki, J., Oja, A., Seppa, H., Pietikainen, S., Kokkala, V., Kuisma, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Acoustic noise Crystals Etching Frequency Micromechanical devices Oscillators Packaging Phase noise Silicon on insulator technology Stability
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Beschreibung
Zusammenfassung:	The stability of wafer level vacuum encapsulated micromechanical resonators is characterized. The resonators are etched of silicon-on-insulator (SOI) wafers using deep reactive ion etching (DRIE) and encapsulated with anodic bonding. Bulk acoustic wave (BAW) resonators show drift better than 0.1 ppm/month demonstrating that the stability requirements for a reference oscillator can be met with MEMS. The drift of flexural resonators range from 4 ppm/month to over 500 ppm/month depending on resonator anchoring. The large drift exhibited by some flexural resonator types is attributed to packaging related stresses.
ISSN:	2159-547X
DOI:	10.1109/SENSOR.2005.1496567