Method for endurance optimization of the HIMOS/spl trade/ flash memory cell

Method for endurance optimization of the HIMOS/spl trade/ flash memory cell

A negative oxide charge located at the split-point is the main cause of threshold voltage window closure in source side injection flash EEPROM cells under 10/sup 5/ write/erase cycles. We show a slow trapping rate and a temperature dependence of the detrapping rate below 100/spl deg/C. The detrappin...

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Hauptverfasser: Yao, T., Lowe, A., Vermeulen, T., Bellafiore, N., Van Houdt, J., Wellekens, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Acceleration
Charge measurement
Current measurement
Flash memory cells
Interleaved codes
Optimization methods
Temperature
Testing
Threshold voltage
Voltage measurement
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Zusammenfassung:A negative oxide charge located at the split-point is the main cause of threshold voltage window closure in source side injection flash EEPROM cells under 10/sup 5/ write/erase cycles. We show a slow trapping rate and a temperature dependence of the detrapping rate below 100/spl deg/C. The detrapping rate is not temperature dependent between 100/spl deg/C and 250/spl deg/C. Finally, the split-point charge formation can be significantly reduced by using of a ramped write pulse.
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2005.1493193