Role of dielectric and barrier integrity in reliability of sub-100 nm copper low-k interconnects

Role of dielectric and barrier integrity in reliability of sub-100 nm copper low-k interconnects

The purpose of this paper is to show the importance of both dielectric and diffusion barrier integrity in the TDDB (time dependent dielectric breakdown) reliability of sub-100 nm copper low-k interconnects. The impact of dielectric and barrier integrity on the model parameters is explained, providin...

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Hauptverfasser: Tokei, Z., Van Aelst, J., Waldfried, C., Escorcia, O., Roussel, P., Richard, O., Travaly, Y., Beyer, G.P., Maex, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Acceleration
Copper
Dielectric breakdown
Dielectric materials
Dielectric substrates
Plasma applications
Plasma chemistry
Plasma temperature
Testing
Voltage
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Beschreibung
Zusammenfassung:The purpose of this paper is to show the importance of both dielectric and diffusion barrier integrity in the TDDB (time dependent dielectric breakdown) reliability of sub-100 nm copper low-k interconnects. The impact of dielectric and barrier integrity on the model parameters is explained, providing easy guidance for correct interpretation of BEOL TDDB data.
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2005.1493135