Hot carrier generation and reliability of BT(body-tied)-Fin type SRAM cell transistors (W/sub fin/=20/spl sim/70 nm)
In this paper, we fabricated a BT-FinFET SRAM device with the smallest cell size of 0.46 /spl mu/m/sup 2/. And a hot carrier generation mechanism in the FinFET is thoroughly evaluated by measuring the I/sub sub/ of the BT-FinFET for various Si fin widths (20/spl sim/70 nm). For the first time, we re...
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| creator | Young Joon Ahn Hye Jin Cho Hee Soo Kang Choong-Ho Lee Chul Lee Jae-man Yoon Tae Yong Kim Eun Suk Cho Suk-Kang Sung Donggun Park Kinam Kim Byung-Il Ryu |
| description | In this paper, we fabricated a BT-FinFET SRAM device with the smallest cell size of 0.46 /spl mu/m/sup 2/. And a hot carrier generation mechanism in the FinFET is thoroughly evaluated by measuring the I/sub sub/ of the BT-FinFET for various Si fin widths (20/spl sim/70 nm). For the first time, we revealed the mechanism of improved hot carrier immunity of sub 50 nm fin type MOSFETs. |
| doi_str_mv | 10.1109/RELPHY.2005.1493111 |
| format | Conference Proceeding |
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And a hot carrier generation mechanism in the FinFET is thoroughly evaluated by measuring the I/sub sub/ of the BT-FinFET for various Si fin widths (20/spl sim/70 nm). For the first time, we revealed the mechanism of improved hot carrier immunity of sub 50 nm fin type MOSFETs.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 0780388038</identifier><identifier>ISBN: 9780780388031</identifier><identifier>EISSN: 1938-1891</identifier><identifier>DOI: 10.1109/RELPHY.2005.1493111</identifier><language>eng</language><publisher>IEEE</publisher><subject>Breakdown voltage ; Charge measurement ; Current measurement ; Fabrication ; FinFETs ; Hot carriers ; Immune system ; MOSFETs ; Random access memory ; Silicon compounds</subject><ispartof>2005 IEEE International Reliability Physics Symposium, 2005. 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For the first time, we revealed the mechanism of improved hot carrier immunity of sub 50 nm fin type MOSFETs.</description><subject>Breakdown voltage</subject><subject>Charge measurement</subject><subject>Current measurement</subject><subject>Fabrication</subject><subject>FinFETs</subject><subject>Hot carriers</subject><subject>Immune system</subject><subject>MOSFETs</subject><subject>Random access memory</subject><subject>Silicon compounds</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>0780388038</isbn><isbn>9780780388031</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkD1PwzAURS0-JErpL-jisR3S-NlJbA8MpWopUhGoFCGmyolfkFGaVLYZ8u8pole6OsOVznAJGQObATCdbpeb1_XnjDOWzyDTAgAuyAC0UAkoDZfklknFhPrr1WnIM0gk48UNGYXwzU7JciG5GpC47iKtjPcOPf3CFr2JrmupaS312DhTusbFnnY1fdhNys72SXRop8nKtTT2R6Rv2_kzrbBpaPSmDS7Ezgc6-UjDT0lr16b3nKXh2NDgDqlktD1M78h1bZqAozOH5H213C3Wyebl8Wkx3yQOZB4TrW3NSyhQoxU1MzZnnKG1UpccC2a5qjJRFzJjeYVFoY2qKjBc2rwsEcCKIRn_ex0i7o_eHYzv9-fDxC_3h1zn</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>Young Joon Ahn</creator><creator>Hye Jin Cho</creator><creator>Hee Soo Kang</creator><creator>Choong-Ho Lee</creator><creator>Chul Lee</creator><creator>Jae-man Yoon</creator><creator>Tae Yong Kim</creator><creator>Eun Suk Cho</creator><creator>Suk-Kang Sung</creator><creator>Donggun Park</creator><creator>Kinam Kim</creator><creator>Byung-Il Ryu</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2005</creationdate><title>Hot carrier generation and reliability of BT(body-tied)-Fin type SRAM cell transistors (W/sub fin/=20/spl sim/70 nm)</title><author>Young Joon Ahn ; Hye Jin Cho ; Hee Soo Kang ; Choong-Ho Lee ; Chul Lee ; Jae-man Yoon ; Tae Yong Kim ; Eun Suk Cho ; Suk-Kang Sung ; Donggun Park ; Kinam Kim ; Byung-Il Ryu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-99df2b16e9ed3f0ad5020edd79b2e60d28c43f67405ce669a8cc1a27d5bbe11d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Breakdown voltage</topic><topic>Charge measurement</topic><topic>Current measurement</topic><topic>Fabrication</topic><topic>FinFETs</topic><topic>Hot carriers</topic><topic>Immune system</topic><topic>MOSFETs</topic><topic>Random access memory</topic><topic>Silicon compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Young Joon Ahn</creatorcontrib><creatorcontrib>Hye Jin Cho</creatorcontrib><creatorcontrib>Hee Soo Kang</creatorcontrib><creatorcontrib>Choong-Ho Lee</creatorcontrib><creatorcontrib>Chul Lee</creatorcontrib><creatorcontrib>Jae-man Yoon</creatorcontrib><creatorcontrib>Tae Yong Kim</creatorcontrib><creatorcontrib>Eun Suk Cho</creatorcontrib><creatorcontrib>Suk-Kang Sung</creatorcontrib><creatorcontrib>Donggun Park</creatorcontrib><creatorcontrib>Kinam Kim</creatorcontrib><creatorcontrib>Byung-Il Ryu</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Young Joon Ahn</au><au>Hye Jin Cho</au><au>Hee Soo Kang</au><au>Choong-Ho Lee</au><au>Chul Lee</au><au>Jae-man Yoon</au><au>Tae Yong Kim</au><au>Eun Suk Cho</au><au>Suk-Kang Sung</au><au>Donggun Park</au><au>Kinam Kim</au><au>Byung-Il Ryu</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Hot carrier generation and reliability of BT(body-tied)-Fin type SRAM cell transistors (W/sub fin/=20/spl sim/70 nm)</atitle><btitle>2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual</btitle><stitle>RELPHY</stitle><date>2005</date><risdate>2005</risdate><spage>352</spage><epage>355</epage><pages>352-355</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>0780388038</isbn><isbn>9780780388031</isbn><abstract>In this paper, we fabricated a BT-FinFET SRAM device with the smallest cell size of 0.46 /spl mu/m/sup 2/. And a hot carrier generation mechanism in the FinFET is thoroughly evaluated by measuring the I/sub sub/ of the BT-FinFET for various Si fin widths (20/spl sim/70 nm). For the first time, we revealed the mechanism of improved hot carrier immunity of sub 50 nm fin type MOSFETs.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.2005.1493111</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1541-7026 |
| ispartof | 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.352-355 |
| issn | 1541-7026 1938-1891 |
| language | eng |
| recordid | cdi_ieee_primary_1493111 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Breakdown voltage Charge measurement Current measurement Fabrication FinFETs Hot carriers Immune system MOSFETs Random access memory Silicon compounds |
| title | Hot carrier generation and reliability of BT(body-tied)-Fin type SRAM cell transistors (W/sub fin/=20/spl sim/70 nm) |
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