Hot carrier generation and reliability of BT(body-tied)-Fin type SRAM cell transistors (W/sub fin/=20/spl sim/70 nm)

Hot carrier generation and reliability of BT(body-tied)-Fin type SRAM cell transistors (W/sub fin/=20/spl sim/70 nm)

In this paper, we fabricated a BT-FinFET SRAM device with the smallest cell size of 0.46 /spl mu/m/sup 2/. And a hot carrier generation mechanism in the FinFET is thoroughly evaluated by measuring the I/sub sub/ of the BT-FinFET for various Si fin widths (20/spl sim/70 nm). For the first time, we re...

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Hauptverfasser: Young Joon Ahn, Hye Jin Cho, Hee Soo Kang, Choong-Ho Lee, Chul Lee, Jae-man Yoon, Tae Yong Kim, Eun Suk Cho, Suk-Kang Sung, Donggun Park, Kinam Kim, Byung-Il Ryu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Breakdown voltage
Charge measurement
Current measurement
Fabrication
FinFETs
Hot carriers
Immune system
MOSFETs
Random access memory
Silicon compounds
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Zusammenfassung:In this paper, we fabricated a BT-FinFET SRAM device with the smallest cell size of 0.46 /spl mu/m/sup 2/. And a hot carrier generation mechanism in the FinFET is thoroughly evaluated by measuring the I/sub sub/ of the BT-FinFET for various Si fin widths (20/spl sim/70 nm). For the first time, we revealed the mechanism of improved hot carrier immunity of sub 50 nm fin type MOSFETs.
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2005.1493111