Cross-sectional TEM studies of heavily boron-doped silicon
The microstructure of heavily boron-doped silicon with a surface layer of borosilicate glass was compared with that of thermally oxidized boron-doped silicon. The microstructures and dislocation configurations were characterized by cross-sectional transmission electron microscopy using both strain c...
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| creator | Ning, X.J. Pirouz, P. Mehregany, M. Chu, W. |
| description | The microstructure of heavily boron-doped silicon with a surface layer of borosilicate glass was compared with that of thermally oxidized boron-doped silicon. The microstructures and dislocation configurations were characterized by cross-sectional transmission electron microscopy using both strain contrast and phase contrast. No significant difference was found between the dislocation content and configuration of the two materials. However, the roughness of the oxide/p/sup +/ interface was very different in the two cases.< > |
| doi_str_mv | 10.1109/SENSOR.1991.148992 |
| format | Conference Proceeding |
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The microstructures and dislocation configurations were characterized by cross-sectional transmission electron microscopy using both strain contrast and phase contrast. No significant difference was found between the dislocation content and configuration of the two materials. However, the roughness of the oxide/p/sup +/ interface was very different in the two cases.< ></description><identifier>ISBN: 9780879425852</identifier><identifier>ISBN: 0879425857</identifier><identifier>DOI: 10.1109/SENSOR.1991.148992</identifier><language>eng</language><publisher>IEEE</publisher><subject>Boron ; Capacitive sensors ; Electron microscopy ; Glass ; Materials science and technology ; Mechanical factors ; Microstructure ; Silicon ; Thermal stresses ; Transmission electron microscopy</subject><ispartof>TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. 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However, the roughness of the oxide/p/sup +/ interface was very different in the two cases.< ></description><subject>Boron</subject><subject>Capacitive sensors</subject><subject>Electron microscopy</subject><subject>Glass</subject><subject>Materials science and technology</subject><subject>Mechanical factors</subject><subject>Microstructure</subject><subject>Silicon</subject><subject>Thermal stresses</subject><subject>Transmission electron microscopy</subject><isbn>9780879425852</isbn><isbn>0879425857</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj91KwzAYQAMiTGZfYFd5gdYkzc8X76TUH9gcuN6PNP3CIrUZTRX29grz3Jy7A4eQDWcV58w-HNr3w_6j4tbyikuwVtyQwhpgYKwUCpRYkSLnT_aHVMwwfkcemznlXGb0S0yTG2nX7mhevoeImaZAT-h-4nihfZrTVA7pjAPNcYw-TffkNrgxY_HvNeme2655Lbf7l7fmaVtGMEuJDISW1imBWnuLygfWe801OMNFb8zggwl16KUA2XPpw4CqdgKcAoRg6jXZXLMREY_nOX65-XK8_tW_iypGig</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Ning, X.J.</creator><creator>Pirouz, P.</creator><creator>Mehregany, M.</creator><creator>Chu, W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Cross-sectional TEM studies of heavily boron-doped silicon</title><author>Ning, X.J. ; Pirouz, P. ; Mehregany, M. ; Chu, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-e082649a52e66c9e5cf0bc6168a712b77dcf7f3fb4284b14cfde53a28a58e8f73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Boron</topic><topic>Capacitive sensors</topic><topic>Electron microscopy</topic><topic>Glass</topic><topic>Materials science and technology</topic><topic>Mechanical factors</topic><topic>Microstructure</topic><topic>Silicon</topic><topic>Thermal stresses</topic><topic>Transmission electron microscopy</topic><toplevel>online_resources</toplevel><creatorcontrib>Ning, X.J.</creatorcontrib><creatorcontrib>Pirouz, P.</creatorcontrib><creatorcontrib>Mehregany, M.</creatorcontrib><creatorcontrib>Chu, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ning, X.J.</au><au>Pirouz, P.</au><au>Mehregany, M.</au><au>Chu, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Cross-sectional TEM studies of heavily boron-doped silicon</atitle><btitle>TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers</btitle><stitle>SENSOR</stitle><date>1991</date><risdate>1991</risdate><spage>755</spage><epage>758</epage><pages>755-758</pages><isbn>9780879425852</isbn><isbn>0879425857</isbn><abstract>The microstructure of heavily boron-doped silicon with a surface layer of borosilicate glass was compared with that of thermally oxidized boron-doped silicon. The microstructures and dislocation configurations were characterized by cross-sectional transmission electron microscopy using both strain contrast and phase contrast. No significant difference was found between the dislocation content and configuration of the two materials. However, the roughness of the oxide/p/sup +/ interface was very different in the two cases.< ></abstract><pub>IEEE</pub><doi>10.1109/SENSOR.1991.148992</doi><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 9780879425852 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boron Capacitive sensors Electron microscopy Glass Materials science and technology Mechanical factors Microstructure Silicon Thermal stresses Transmission electron microscopy |
| title | Cross-sectional TEM studies of heavily boron-doped silicon |
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