Cross-sectional TEM studies of heavily boron-doped silicon

Cross-sectional TEM studies of heavily boron-doped silicon

The microstructure of heavily boron-doped silicon with a surface layer of borosilicate glass was compared with that of thermally oxidized boron-doped silicon. The microstructures and dislocation configurations were characterized by cross-sectional transmission electron microscopy using both strain c...

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Bibliographische Detailangaben
Hauptverfasser: Ning, X.J., Pirouz, P., Mehregany, M., Chu, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Boron
Capacitive sensors
Electron microscopy
Glass
Materials science and technology
Mechanical factors
Microstructure
Silicon
Thermal stresses
Transmission electron microscopy
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Zusammenfassung:The microstructure of heavily boron-doped silicon with a surface layer of borosilicate glass was compared with that of thermally oxidized boron-doped silicon. The microstructures and dislocation configurations were characterized by cross-sectional transmission electron microscopy using both strain contrast and phase contrast. No significant difference was found between the dislocation content and configuration of the two materials. However, the roughness of the oxide/p/sup +/ interface was very different in the two cases.< >
DOI:10.1109/SENSOR.1991.148992