Rapid mapping of AR coating thickness on Si solar cells using GT-FabScan 6000
A new technique for rapid mapping of the thickness, of an antireflection (AR) coating on a solar cell is described. A filtered, reflectance (intensity) image of the AR-coated wafer is generated by a CCD camera mounted on a GTFabScan. This image is converted into a thickness image using a transformat...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A new technique for rapid mapping of the thickness, of an antireflection (AR) coating on a solar cell is described. A filtered, reflectance (intensity) image of the AR-coated wafer is generated by a CCD camera mounted on a GTFabScan. This image is converted into a thickness image using a transformation relating local AR thickness to the local intensity in the image plane. The thickness map is generated in |
---|---|
ISSN: | 0160-8371 |
DOI: | 10.1109/PVSC.2005.1488287 |