Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters

We discuss lattice-mismatched (LMM) approaches utilizing compositionally step-graded layers and buffer layers that yield III-V photovoltaic devices with performance parameters equaling those of similar lattice-matched (LM) devices. Our progress in developing high-performance, LMM, InP-based GaInAs/I...

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Hauptverfasser:	Wanlass, M.W., Ahrenkiel, S.P., Ahrenkiel, R.K., Albin, D.S., Carapella, J.J., Duda, A., Geisz, J.F., Kurtz, S., Moriarty, T., Wehrer, R.J., Wernsman, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BUFFER LAYERS BUFFERS Crystalline materials DEVICES ENERGY CONVERSION Epitaxial growth Hydrogen III-V semiconductor materials LATTICE-MATCHED (LM) LATTICE-MISMATCHED (LMM) MATERIALS SCIENCE Photonic band gap Photovoltaic systems PV SOLAR ENERGY SOLAR ENERGY - PHOTOVOLTAICS Solar power generation STEP-GRADED LAYERS Substrates THERMOPHOTOVOLTAIC (TPV)
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Beschreibung
Zusammenfassung:	We discuss lattice-mismatched (LMM) approaches utilizing compositionally step-graded layers and buffer layers that yield III-V photovoltaic devices with performance parameters equaling those of similar lattice-matched (LM) devices. Our progress in developing high-performance, LMM, InP-based GaInAs/InAsP materials and devices for thermophotovoltaic (TPV) energy conversion is highlighted. A novel, monolithic, multi-bandgap, tandem device for solar PV (SPV) conversion involving LMM materials is also presented along with promising preliminary performance results.
ISSN:	0160-8371
DOI:	10.1109/PVSC.2005.1488186