Preparation and properties of CIGS and CIGSS thin films using DESe as a selenium source and H/sub 2/S as sulfur source

Cu(In/sub 1-x/Ga/sub x/)(Se/sub 1-y/S/sub y/)/sub 2/ (CIGSS) thin films were prepared at the FSEC photovoltaic materials lab in two steps. The first step consisted of deposition of CuGa-In precursors using DC magnetron sputtering on molybdenum back contact. The second step involved selenization/sulfurization of these precursors. Selenization was carried out using diethylselenide (DESe) as a selenium source and H/sub 2/S as sulfur source. CIGSS thin-film solar cells were completed by depositing n-type CdS layer by chemical bath deposition (CBD), ZnO/ZnO:Al window bilayer by RF magnetron sputtering and Ni-AI front contacts by e-beam evaporation. This paper describes the new DESe set-up developed at FSEC PV Materials Lab and preparation and properties of CuIn/sub 1-x/Ga/sub x/Se/sub 2/ (CIGS) and CIGSS thin films.