Hot-carrier reliability of high side NDMOS in smart power SOI technologies

Hot-carrier reliability of high side NDMOS in smart power SOI technologies

The influence of the stacking potential on the hot-carrier (HC) reliability and safe operational area (SOA) of lateral SOI-NDMOS transistors is investigated for the first time. It is shown by measurements and simulation results that a decrease in the off-state breakdown voltage due to the potential...

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Bibliographische Detailangaben
Hauptverfasser: Dietz, F., Schwantes, S., Stephan, T., Dudek, V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Breakdown voltage
Degradation
Hot carriers
Isolation technology
MOS devices
Semiconductor optical amplifiers
Stacking
Switches
Variable structure systems
Voltage control
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Beschreibung
Zusammenfassung:The influence of the stacking potential on the hot-carrier (HC) reliability and safe operational area (SOA) of lateral SOI-NDMOS transistors is investigated for the first time. It is shown by measurements and simulation results that a decrease in the off-state breakdown voltage due to the potential of the wafer backside of NDMOS devices does not necessarily implicate a decrease of the HC reliability while the electrical SOA can be reduced.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2005.1487961