Investigations on the ruggedness limit of 6.5 kV IGBT

Investigations on the ruggedness limit of 6.5 kV IGBT

The save operating area (SOA) of high voltage 6.5 kV IGBTs has been investigated. The ruggedness of the IGBT with planar cell structure is limited by the hole current density in the cell structure arriving from the avalanche generation under turn-off conditions. The impact of current density, V/sub...

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Bibliographische Detailangaben
Hauptverfasser: Bauer, J.G., Schilling, O., Schaeffer, C., Hille, F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current density
Current measurement
Density measurement
Insulated gate bipolar transistors
Medical tests
Medium voltage
Numerical simulation
Semiconductor optical amplifiers
Switching loss
Temperature
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Beschreibung
Zusammenfassung:The save operating area (SOA) of high voltage 6.5 kV IGBTs has been investigated. The ruggedness of the IGBT with planar cell structure is limited by the hole current density in the cell structure arriving from the avalanche generation under turn-off conditions. The impact of current density, V/sub cc/ and vertical IGBT structure on the ruggedness has been taken into account. With a modified cell design the avalanche generation can be reduced significantly. Simulations with a trench IGBT promises additional SOA improvement.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2005.1487953