A thin-film bulk-acoustic-wave resonator-controlled oscillator on silicon

A thin-film bulk-acoustic-wave resonator-controlled oscillator on silicon

A composite ZnO bulk-acoustic-wave thin-film resonator (TFR) has been fabricated on a silicon substrate with a double-diffused BJT. Fabrication techniques unique to the integration of the TFR are discussed. The integrated TFR-BJT structure was configured as a VHF Pierce oscillator circuit with a fun...

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Veröffentlicht in:IEEE electron device letters 1987-11, Vol.8 (11), p.531-533
Hauptverfasser: Burkland, W.A., Landin, A.R., Kline, G.R., Ketcham, R.S.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Fabrication
Frequency
Integrated circuits
Oscillators
Phase noise
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor thin films
Silicon
Substrates
Thin film circuits
VHF circuits
Zinc oxide
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Beschreibung
Zusammenfassung:A composite ZnO bulk-acoustic-wave thin-film resonator (TFR) has been fabricated on a silicon substrate with a double-diffused BJT. Fabrication techniques unique to the integration of the TFR are discussed. The integrated TFR-BJT structure was configured as a VHF Pierce oscillator circuit with a fundamental frequency of 257 MHz. Phase noise is better than -90 dBc/Hz at a 1-kHz offset. Temperature stability is - 8.5 ppm/°C from 5°C to 65°C and - 3.75 ppm/°C from 55°C to 5°C. The integration of the TFR with active components is viewed as a development toward large-scale RF circuit integration.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26718