A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM's

A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM's

We report measurements of 200-s charge-recovery time constants at 300 K in the dark for an MBE-grown GaAs p- -n+ - p-buried well structure. Storage-time-versus-temperature measurements indicate that the charge recovery is due to generation through midgap levels. The results suggest the possibility o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1987-05, Vol.8 (5), p.243-245
Hauptverfasser: Dungan, T.E., Cooper, J.A., Melloch, M.R.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Capacitance
Current measurement
DRAM chips
Electronics
Electrons
Exact sciences and technology
Forward contracts
Gallium arsenide
MODFET circuits
Storage and reproduction of information
Substrates
Time measurement
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report measurements of 200-s charge-recovery time constants at 300 K in the dark for an MBE-grown GaAs p- -n+ - p-buried well structure. Storage-time-versus-temperature measurements indicate that the charge recovery is due to generation through midgap levels. The results suggest the possibility of MODFET- or MESFET-compatible single-transistor buried-well dynamic RAM's capable of operating at or above room temperature.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26617