Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process

Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process

High-performance interdigitated metal-semiconductor-metal (IMSM) detectors and photoreceivers have been fabricated using a standard refractory-gate, ion-implanted MESFET process which was also used to fabricate complex digital circuits. A rise time of 110 ps has been observed for a detector-preampli...

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Veröffentlicht in:IEEE electron device letters 1986-11, Vol.7 (11), p.600-602
1. Verfasser: Rogers, D.L.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit noise
Circuit properties
Coupling circuits
Detectors
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Implants
MESFET circuits
Miscellaneous
Monolithic integrated circuits
Noise reduction
Optical and optoelectronic circuits
Optical noise
Photodiodes
Preamplifiers
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Beschreibung
Zusammenfassung:High-performance interdigitated metal-semiconductor-metal (IMSM) detectors and photoreceivers have been fabricated using a standard refractory-gate, ion-implanted MESFET process which was also used to fabricate complex digital circuits. A rise time of 110 ps has been observed for a detector-preamplifier combination implying a small-signal bandwidth of about 3 GHz. Detector responsivities as high as 0.45 A/W, and dark currents as low as 5 nA have been observed.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26487