Avalanche gain in GexSi1-x/Si infrared waveguide detectors
Avalanche gain in Ge x Si 1-x /Si heterostructures photodiodes has been measured for the first time. Absorption of infrared radiation occurs in a Ge x Si 1-x /Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding...
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| Veröffentlicht in: | IEEE electron device letters 1986-05, Vol.7 (5), p.330-332 |
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| container_end_page | 332 |
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| container_issue | 5 |
| container_start_page | 330 |
| container_title | IEEE electron device letters |
| container_volume | 7 |
| creator | Pearsall, T.P. Temkin, H. Bean, J.C. Luryi, S. |
| description | Avalanche gain in Ge x Si 1-x /Si heterostructures photodiodes has been measured for the first time. Absorption of infrared radiation occurs in a Ge x Si 1-x /Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding layers. Multiplication factors as high as 50 have been obtained for a 1.1-µm wavelength response (x = 0.2). The external absolute sensitivity operating at a multiplication of 10 is 1.1 A/W at 1.3 µm for an uncoated device. |
| doi_str_mv | 10.1109/EDL.1986.26390 |
| format | Article |
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Absorption of infrared radiation occurs in a Ge x Si 1-x /Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding layers. Multiplication factors as high as 50 have been obtained for a 1.1-µm wavelength response (x = 0.2). The external absolute sensitivity operating at a multiplication of 10 is 1.1 A/W at 1.3 µm for an uncoated device.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1986.26390</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng ; jpn</language><publisher>New York, NY: IEEE</publisher><subject>Absorption ; Applied sciences ; Avalanche photodiodes ; Exact sciences and technology ; Laser sintering ; Optical buffering ; Optical fiber communication ; Optical materials ; Optical noise ; Optical superlattices ; Optical waveguides ; Other techniques and industries ; Semiconductor device noise</subject><ispartof>IEEE electron device letters, 1986-05, Vol.7 (5), p.330-332</ispartof><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1486213$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1486213$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8110150$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Pearsall, T.P.</creatorcontrib><creatorcontrib>Temkin, H.</creatorcontrib><creatorcontrib>Bean, J.C.</creatorcontrib><creatorcontrib>Luryi, S.</creatorcontrib><title>Avalanche gain in GexSi1-x/Si infrared waveguide detectors</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Avalanche gain in Ge x Si 1-x /Si heterostructures photodiodes has been measured for the first time. Absorption of infrared radiation occurs in a Ge x Si 1-x /Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding layers. Multiplication factors as high as 50 have been obtained for a 1.1-µm wavelength response (x = 0.2). The external absolute sensitivity operating at a multiplication of 10 is 1.1 A/W at 1.3 µm for an uncoated device.</description><subject>Absorption</subject><subject>Applied sciences</subject><subject>Avalanche photodiodes</subject><subject>Exact sciences and technology</subject><subject>Laser sintering</subject><subject>Optical buffering</subject><subject>Optical fiber communication</subject><subject>Optical materials</subject><subject>Optical noise</subject><subject>Optical superlattices</subject><subject>Optical waveguides</subject><subject>Other techniques and industries</subject><subject>Semiconductor device noise</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNo9T8FKw0AUXETBWL168ZKD103fy242u95KrVUIeKiey8vmpa7EWLK11r83UBEGhscMM2-EuEbIEMFNF_dVhs6aLDfKwYlIsCishMKoU5FAqVEqBHMuLmJ8B0CtS52Iu9meOur9G6cbCn06YsmHVUB5mK7CeLYDDdyk37TnzVdoOG14x373OcRLcdZSF_nqjyfi9WHxMn-U1fPyaT6rZEAsQJZIqibFzthaWfYFAebKQkG5o5I1gdO2tg1jnZfeABjVUNO2lp3NWVs1EbfH3C1FT934UO9DXG-H8EHDz9qO48ee0XZztAVm_ldRW5OjUr815lEo</recordid><startdate>198605</startdate><enddate>198605</enddate><creator>Pearsall, T.P.</creator><creator>Temkin, H.</creator><creator>Bean, J.C.</creator><creator>Luryi, S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>198605</creationdate><title>Avalanche gain in GexSi1-x/Si infrared waveguide detectors</title><author>Pearsall, T.P. ; Temkin, H. ; Bean, J.C. ; Luryi, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i1150-71a3ba3e968b38ec5a0123805a29a7e4a0948b8de1b27c60063dadff8e982e483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>1986</creationdate><topic>Absorption</topic><topic>Applied sciences</topic><topic>Avalanche photodiodes</topic><topic>Exact sciences and technology</topic><topic>Laser sintering</topic><topic>Optical buffering</topic><topic>Optical fiber communication</topic><topic>Optical materials</topic><topic>Optical noise</topic><topic>Optical superlattices</topic><topic>Optical waveguides</topic><topic>Other techniques and industries</topic><topic>Semiconductor device noise</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pearsall, T.P.</creatorcontrib><creatorcontrib>Temkin, H.</creatorcontrib><creatorcontrib>Bean, J.C.</creatorcontrib><creatorcontrib>Luryi, S.</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pearsall, T.P.</au><au>Temkin, H.</au><au>Bean, J.C.</au><au>Luryi, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Avalanche gain in GexSi1-x/Si infrared waveguide detectors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1986-05</date><risdate>1986</risdate><volume>7</volume><issue>5</issue><spage>330</spage><epage>332</epage><pages>330-332</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Avalanche gain in Ge x Si 1-x /Si heterostructures photodiodes has been measured for the first time. Absorption of infrared radiation occurs in a Ge x Si 1-x /Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding layers. Multiplication factors as high as 50 have been obtained for a 1.1-µm wavelength response (x = 0.2). The external absolute sensitivity operating at a multiplication of 10 is 1.1 A/W at 1.3 µm for an uncoated device.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/EDL.1986.26390</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1986-05, Vol.7 (5), p.330-332 |
| issn | 0741-3106 1558-0563 |
| language | eng ; jpn |
| recordid | cdi_ieee_primary_1486213 |
| source | IEEE Electronic Library (IEL) |
| subjects | Absorption Applied sciences Avalanche photodiodes Exact sciences and technology Laser sintering Optical buffering Optical fiber communication Optical materials Optical noise Optical superlattices Optical waveguides Other techniques and industries Semiconductor device noise |
| title | Avalanche gain in GexSi1-x/Si infrared waveguide detectors |
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