Avalanche gain in GexSi1-x/Si infrared waveguide detectors

Avalanche gain in Ge x Si 1-x /Si heterostructures photodiodes has been measured for the first time. Absorption of infrared radiation occurs in a Ge x Si 1-x /Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding...

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Veröffentlicht in:	IEEE electron device letters 1986-05, Vol.7 (5), p.330-332
Hauptverfasser:	Pearsall, T.P., Temkin, H., Bean, J.C., Luryi, S.
Format:	Artikel
Sprache:	eng ; jpn
Schlagworte:	Absorption Applied sciences Avalanche photodiodes Exact sciences and technology Laser sintering Optical buffering Optical fiber communication Optical materials Optical noise Optical superlattices Optical waveguides Other techniques and industries Semiconductor device noise
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Beschreibung
Zusammenfassung:	Avalanche gain in Ge x Si 1-x /Si heterostructures photodiodes has been measured for the first time. Absorption of infrared radiation occurs in a Ge x Si 1-x /Si strained-layer superlattice (SLS) which serves as a waveguide core, and the avalanche multiplication takes place in one of the Si-cladding layers. Multiplication factors as high as 50 have been obtained for a 1.1-µm wavelength response (x = 0.2). The external absolute sensitivity operating at a multiplication of 10 is 1.1 A/W at 1.3 µm for an uncoated device.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/EDL.1986.26390