Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor deposition

Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor deposition

InP/InGaAs avalanche photodiodes with separate absorption and multiplication regions (SAM APD's) have been fabricated from wafers grown by atmospheric-pressure metalorganic chemical vapor deposition. These APD's exhibit low dark current and good quantum efficiency. The pulse response exhib...

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Veröffentlicht in:IEEE electron device letters 1986-05, Vol.7 (5), p.296-298
Hauptverfasser: Dupuis, R.D., Velebir, J.R., Campbell, J.C., Qua, G.J.
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Applied sciences
Avalanche photodiodes
Boundary conditions
Chemical vapor deposition
Dark current
Electronics
Exact sciences and technology
Indium gallium arsenide
Indium phosphide
MOCVD
Molecular beam epitaxial growth
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Tunneling
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Zusammenfassung:InP/InGaAs avalanche photodiodes with separate absorption and multiplication regions (SAM APD's) have been fabricated from wafers grown by atmospheric-pressure metalorganic chemical vapor deposition. These APD's exhibit low dark current and good quantum efficiency. The pulse response exhibits the two-component response typical of the SAM-APD structure. The slow component is 6 ns and the fast component is 100 ps.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26379