New method to measure the source and drain resistance of the GaAs MESFET

The method to measure the source resistance of the GaAs MESFET proposed here is able to determine its value directly without correcting for the channel resistance of the GaAs MESFET. A low gate current measurement condition is employed which leads to accurate determination of R s and R d over a rela...

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Veröffentlicht in:	IEEE electron device letters 1986-02, Vol.7 (2), p.75-77
Hauptverfasser:	Yang, L., Long, S.I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Current density Current measurement Diodes Doping profiles Electrical resistance measurement Electronics Equations Error correction Exact sciences and technology Gallium arsenide MESFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Voltage
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Zusammenfassung:	The method to measure the source resistance of the GaAs MESFET proposed here is able to determine its value directly without correcting for the channel resistance of the GaAs MESFET. A low gate current measurement condition is employed which leads to accurate determination of R s and R d over a relatively wide range of drain currents.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/EDL.1986.26299