The DC, AC, and noise properties of the GaAs/AlGaAs modulation-doped field-effect transistor channel

The DC, AC, and noise properties of the GaAs/AlGaAs modulation-doped field-effect transistor channel

The channel noise of a normally-on MODFET has been measured at T = 300 K as a function of bias and frequency. The results are in good agreement with theoretical predictions for velocity fluctuation noise. A new method is introduced to calculate the correct dependence of the two-dimensional carrier c...

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Veröffentlicht in:IEEE transactions on electron devices 1986-10, Vol.33 (10), p.1439-1446, Article 1439
Hauptverfasser: Whiteside, C.F., Bosman, G., Morkoc, H., Kopp, W.F.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 1446
container_issue 10
container_start_page 1439
container_title IEEE transactions on electron devices
container_volume 33
creator Whiteside, C.F.
Bosman, G.
Morkoc, H.
Kopp, W.F.
description The channel noise of a normally-on MODFET has been measured at T = 300 K as a function of bias and frequency. The results are in good agreement with theoretical predictions for velocity fluctuation noise. A new method is introduced to calculate the correct dependence of the two-dimensional carrier concentration on channel voltage. The measurements indicate that real-space-charge transfer in the bias range considered is negligible.
doi_str_mv 10.1109/T-ED.1986.22692
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subjects Applied sciences
Electronics
Exact sciences and technology
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title The DC, AC, and noise properties of the GaAs/AlGaAs modulation-doped field-effect transistor channel
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