The DC, AC, and noise properties of the GaAs/AlGaAs modulation-doped field-effect transistor channel

The channel noise of a normally-on MODFET has been measured at T = 300 K as a function of bias and frequency. The results are in good agreement with theoretical predictions for velocity fluctuation noise. A new method is introduced to calculate the correct dependence of the two-dimensional carrier c...

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Veröffentlicht in:	IEEE transactions on electron devices 1986-10, Vol.33 (10), p.1439-1446, Article 1439
Hauptverfasser:	Whiteside, C.F., Bosman, G., Morkoc, H., Kopp, W.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Other techniques and industries Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Beschreibung
Zusammenfassung:	The channel noise of a normally-on MODFET has been measured at T = 300 K as a function of bias and frequency. The results are in good agreement with theoretical predictions for velocity fluctuation noise. A new method is introduced to calculate the correct dependence of the two-dimensional carrier concentration on channel voltage. The measurements indicate that real-space-charge transfer in the bias range considered is negligible.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/T-ED.1986.22692