Modeling the turn-off characteristics of the bipolar-MOS transistor

Modeling the turn-off characteristics of the bipolar-MOS transistor

Since the turn-off speed of the new bipolar-MOS power transistor is slow compared to that of a MOSFET, it is important to understand the limiting mechanism and the prospect for future improvement. In this letter, it is demonstrated that the turnoff waveform can be explained by a model based on a sim...

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Veröffentlicht in:IEEE electron device letters 1985-05, Vol.6 (5), p.211-214
Hauptverfasser: Kuo, D.-S., Choi, J.-Y., Giandomenico, D., Hu, C., Sapp, S.P., Sassaman, K.A., Bregar, R.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Cameras
Electrodes
Electronics
Equivalent circuits
Exact sciences and technology
Impedance
Instruments
MOSFET circuits
Power MOSFET
Power transistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spontaneous emission
Transistors
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Beschreibung
Zusammenfassung:Since the turn-off speed of the new bipolar-MOS power transistor is slow compared to that of a MOSFET, it is important to understand the limiting mechanism and the prospect for future improvement. In this letter, it is demonstrated that the turnoff waveform can be explained by a model based on a simple equivalent circuit and the transistor open-base turn-off process. The model is applied to explore the impact of some process modifications on speed improvement and to study the tradeoff between speed and on-resistance.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1985.26101