Optoelectronic components for multigigabit systems
Gigabit data rates are becoming relevant for several applications areas, including computer interconnections, trunk telecommunications, and phased-array radar control. LED's, lasers, p-i-n FET's, photoconductors, and avalanche photodiodes are candidate components. Silicon NMOS, bipolar, Ga...
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Veröffentlicht in: | IEEE transactions on electron devices 1985-12, Vol.32 (12), p.2562-2571 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Gigabit data rates are becoming relevant for several applications areas, including computer interconnections, trunk telecommunications, and phased-array radar control. LED's, lasers, p-i-n FET's, photoconductors, and avalanche photodiodes are candidate components. Silicon NMOS, bipolar, GaAs FET, and heterojunction bipolar logic IC technologies are all appropriate and no obstacles are apparent to prevent direct modulation to ∼ 10-20 Gbit/s. Wavelength multiplexing will impact strongly in several applications enabling complex new system architectures. Increasing speed and complexity Will drive technology to higher optoelectronic integration levels. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1985.22386 |