Optoelectronic components for multigigabit systems

Gigabit data rates are becoming relevant for several applications areas, including computer interconnections, trunk telecommunications, and phased-array radar control. LED's, lasers, p-i-n FET's, photoconductors, and avalanche photodiodes are candidate components. Silicon NMOS, bipolar, Ga...

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Veröffentlicht in:IEEE transactions on electron devices 1985-12, Vol.32 (12), p.2562-2571
Hauptverfasser: Goodfellow, R.C., Debney, B.T., Rees, G.J., Buus, J.
Format: Artikel
Sprache:eng
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Zusammenfassung:Gigabit data rates are becoming relevant for several applications areas, including computer interconnections, trunk telecommunications, and phased-array radar control. LED's, lasers, p-i-n FET's, photoconductors, and avalanche photodiodes are candidate components. Silicon NMOS, bipolar, GaAs FET, and heterojunction bipolar logic IC technologies are all appropriate and no obstacles are apparent to prevent direct modulation to ∼ 10-20 Gbit/s. Wavelength multiplexing will impact strongly in several applications enabling complex new system architectures. Increasing speed and complexity Will drive technology to higher optoelectronic integration levels.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22386