Monte Carlo simulation of the photoelectron crosstalk in silicon imaging devices

Monte Carlo simulation of the photoelectron crosstalk in silicon imaging devices

The Monte Carlo method is used to evaluate the extent of the crosstalk in solid-state imagers. The calculations are performed in three dimensions and are in excellent agreement with experiment. The Monte Carlo method is used because it handles adjacent regions that either collect or reflect minority...

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Veröffentlicht in:IEEE transactions on electron devices 1985-10, Vol.32 (10), p.2087-2091
Hauptverfasser: Lavine, J.P., Win-Chyi Chang, Anagnostopoulos, C.N., Burkey, B.C., Nelson, E.T.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Display
Electronics
Exact sciences and technology
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Beschreibung
Zusammenfassung:The Monte Carlo method is used to evaluate the extent of the crosstalk in solid-state imagers. The calculations are performed in three dimensions and are in excellent agreement with experiment. The Monte Carlo method is used because it handles adjacent regions that either collect or reflect minority carriers.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22243