A monolithic multigigabit/second DCFL GaAs decision circuit

A GaAs integrated circuit has been designed and fabricated to regenerate digital data at gigabit per second rates. The circuit architecture is direct-coupled FET logic (DCFL), and the fabrication is by self-aligned etched gate on CVD epitaxial material. The circuit includes a moderate-gain input amp...

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Veröffentlicht in:IEEE electron device letters 1984-07, Vol.5 (7), p.226-227
Hauptverfasser: O'Connor, P., Flahive, P.G., Clemetson, W., Panock, R.L., Wemple, S.H., Shunk, S.C., Takahashi, D.P.
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Sprache:eng
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Zusammenfassung:A GaAs integrated circuit has been designed and fabricated to regenerate digital data at gigabit per second rates. The circuit architecture is direct-coupled FET logic (DCFL), and the fabrication is by self-aligned etched gate on CVD epitaxial material. The circuit includes a moderate-gain input amplifier with threshold adjustment, a clocked D flip-flop for data sampling and storage, and an output buffer for driving low impedance transmission lines. Dynamic performance measurements include correct regeneration of pseudorandom data at 2.0 Gbit/s, the maximum allowed by available instrumentation, and 1010... data at 2.4 Gbit/s. Rise/fall times below 150 ps into 50 Ω were observed. A minimum gate delay of 17.8 ps and a maximum toggle frequency of 3.8 GHz were measured with associated ring oscillator and binary frequency divider circuits, respectively.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1984.25898