A monolithic multigigabit/second DCFL GaAs decision circuit
A GaAs integrated circuit has been designed and fabricated to regenerate digital data at gigabit per second rates. The circuit architecture is direct-coupled FET logic (DCFL), and the fabrication is by self-aligned etched gate on CVD epitaxial material. The circuit includes a moderate-gain input amp...
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Veröffentlicht in: | IEEE electron device letters 1984-07, Vol.5 (7), p.226-227 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A GaAs integrated circuit has been designed and fabricated to regenerate digital data at gigabit per second rates. The circuit architecture is direct-coupled FET logic (DCFL), and the fabrication is by self-aligned etched gate on CVD epitaxial material. The circuit includes a moderate-gain input amplifier with threshold adjustment, a clocked D flip-flop for data sampling and storage, and an output buffer for driving low impedance transmission lines. Dynamic performance measurements include correct regeneration of pseudorandom data at 2.0 Gbit/s, the maximum allowed by available instrumentation, and 1010... data at 2.4 Gbit/s. Rise/fall times below 150 ps into 50 Ω were observed. A minimum gate delay of 17.8 ps and a maximum toggle frequency of 3.8 GHz were measured with associated ring oscillator and binary frequency divider circuits, respectively. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/EDL.1984.25898 |