Improvement in very thin gate oxide integrity by ion implantation

It has been found that implanting silicon substrates prior to oxidation considerably improves the quality of very thin gate oxides (70 Å). Data is presented on leakage characteristics and breakdown distributions of these oxides.

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Veröffentlicht in:	IEEE electron device letters 1983-04, Vol.4 (4), p.94-95
1. Verfasser:	Baglee, D.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitors Circuits Electric breakdown Electron devices Ion implantation Oxidation Silicides Silicon Testing Tungsten
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description	It has been found that implanting silicon substrates prior to oxidation considerably improves the quality of very thin gate oxides (70 Å). Data is presented on leakage characteristics and breakdown distributions of these oxides.
doi_str_mv	10.1109/EDL.1983.25661
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Data is presented on leakage characteristics and breakdown distributions of these oxides.</description><subject>Capacitors</subject><subject>Circuits</subject><subject>Electric breakdown</subject><subject>Electron devices</subject><subject>Ion implantation</subject><subject>Oxidation</subject><subject>Silicides</subject><subject>Silicon</subject><subject>Testing</subject><subject>Tungsten</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1983</creationdate><recordtype>article</recordtype><recordid>eNpFkL1PwzAQxS0EEqWwsrB4YkvwxR9xx6oUqBSJBWYrTc7FqEmK7Vbkv8elSEz3offunn6E3ALLAdjsYflY5TDTPC-kUnBGJiClzphU_JxMWCkg48DUJbkK4ZMxEKIUEzJfdTs_HLDDPlLX0wP6kcaP1G3qiHT4di2mfcSNd3Gk65G6oaeu223rPtYxDdfkwtbbgDd_dUren5Zvi5esen1eLeZV1hSCx0yDVWAb1gjJLQosJANUpZRNoyyspcTStlYnjcCymLVQt1oKJkVbM8Ws4lNyf7qb8n7tMUTTudDgNgXBYR9MobmWwMokzE_Cxg8heLRm511X-9EAM0dSJpEyR1Lml1Qy3J0MDhH_xULz9J__AKYXZG4</recordid><startdate>19830401</startdate><enddate>19830401</enddate><creator>Baglee, D.A.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19830401</creationdate><title>Improvement in very thin gate oxide integrity by ion implantation</title><author>Baglee, D.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c243t-81f61fc0c453fe4e2501e6755cc6f1b55e7fdf861f4e729d1ad854054da060f63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1983</creationdate><topic>Capacitors</topic><topic>Circuits</topic><topic>Electric breakdown</topic><topic>Electron devices</topic><topic>Ion implantation</topic><topic>Oxidation</topic><topic>Silicides</topic><topic>Silicon</topic><topic>Testing</topic><topic>Tungsten</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Baglee, D.A.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Baglee, D.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improvement in very thin gate oxide integrity by ion implantation</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1983-04-01</date><risdate>1983</risdate><volume>4</volume><issue>4</issue><spage>94</spage><epage>95</epage><pages>94-95</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>It has been found that implanting silicon substrates prior to oxidation considerably improves the quality of very thin gate oxides (70 Å). 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source	IEEE Electronic Library (IEL)
subjects	Capacitors Circuits Electric breakdown Electron devices Ion implantation Oxidation Silicides Silicon Testing Tungsten
title	Improvement in very thin gate oxide integrity by ion implantation
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