Improvement in very thin gate oxide integrity by ion implantation

Improvement in very thin gate oxide integrity by ion implantation

It has been found that implanting silicon substrates prior to oxidation considerably improves the quality of very thin gate oxides (70 Å). Data is presented on leakage characteristics and breakdown distributions of these oxides.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1983-04, Vol.4 (4), p.94-95
1. Verfasser: Baglee, D.A.
Format: Artikel
Sprache:eng
Schlagworte:
Capacitors
Circuits
Electric breakdown
Electron devices
Ion implantation
Oxidation
Silicides
Silicon
Testing
Tungsten
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Beschreibung
Zusammenfassung:It has been found that implanting silicon substrates prior to oxidation considerably improves the quality of very thin gate oxides (70 Å). Data is presented on leakage characteristics and breakdown distributions of these oxides.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1983.25661