MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate

MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate

We report a process for the recrystallization of thin silicon films on silicon dioxide that uses a composite encapsulation layer of silicon dioxide and silicon nitride in conjunction with zone melting by a moveable strip heater. The recrystallization process achieves large-grained

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Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1981-10, Vol.2 (10), p.241-243
Hauptverfasser: Maby, E.W., Geis, M.W., LeCoz, Y.L., Silversmith, D.J., Mountain, R.W., Antoniadis, D.A.
Format: Artikel
Sprache:eng
Schlagworte:
Crystalline materials
Crystallization
Current measurement
Encapsulation
Insulation
Leakage current
Semiconductor films
Silicon compounds
Strips
Substrates
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Beschreibung
Zusammenfassung:We report a process for the recrystallization of thin silicon films on silicon dioxide that uses a composite encapsulation layer of silicon dioxide and silicon nitride in conjunction with zone melting by a moveable strip heater. The recrystallization process achieves large-grained
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1981.25418