P-N junction and Schottky barrier diode fabrication in laser recrystallized polysilicon on SiO2

P-N junction and Schottky barrier diode fabrication in laser recrystallized polysilicon on SiO2

P-N junction and Schottky barrier diodes have been fabricated in laser recrystallized polycrystalline silicon on SiO 2 . A repetitively Q-switched Nd 3+ :YAG laser was used to anneal polysilicon deposited by LPCVD on oxide thermally grown on

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Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1981-07, Vol.2 (7), p.159-161
Hauptverfasser: Shah, R.R., Hollingsworth, D.R., DeJong, G.A., Crosthwait, D.L.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Metallization
Optical device fabrication
P-n junctions
Pulsed laser deposition
Schottky barriers
Schottky diodes
Semiconductor diodes
Semiconductor lasers
Silicon
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Beschreibung
Zusammenfassung:P-N junction and Schottky barrier diodes have been fabricated in laser recrystallized polycrystalline silicon on SiO 2 . A repetitively Q-switched Nd 3+ :YAG laser was used to anneal polysilicon deposited by LPCVD on oxide thermally grown on
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1981.25382