Linewidth control in projection lithography using a multilayer resist process

Linewidth control in projection lithography using a multilayer resist process

Linewidth control using a tri-layer resist system on wafers with topography is investigated. An absorbing dye is incorporated in the bottom layer to improve the usable resolution. Resist patterns of 1-µm lines and spaces over aluminized topography are demonstrated using a projection aligner. The adv...

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Veröffentlicht in:IEEE transactions on electron devices 1981-11, Vol.28 (11), p.1405-1410
Hauptverfasser: O'Toole, M.M., Liu, E.D., Chang, M.S.
Format: Artikel
Sprache:eng
Schlagworte:
Image resolution
Polymers
Reflection
Resists
Substrates
Surface topography
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Zusammenfassung:Linewidth control using a tri-layer resist system on wafers with topography is investigated. An absorbing dye is incorporated in the bottom layer to improve the usable resolution. Resist patterns of 1-µm lines and spaces over aluminized topography are demonstrated using a projection aligner. The advantages of a multilayer system are investigated using an exposure and development simulation program for optical lithography. The relative contributions of planarization and reflection suppression are discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1981.20622