Degradation induced formation of extended defects in GaP:N LED's
The light output degradation of commercial VPE GaP:N LED's was studied by monitoring minority carrier lifetime and deep level spectra. It was found that the decrease of the quantum efficiency can be completely accounted for by the formation of a nonradiative recombination center T 6 . T 6 is id...
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| Veröffentlicht in: | IEEE transactions on electron devices 1981-04, Vol.28 (4), p.421-424 |
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| container_title | IEEE transactions on electron devices |
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| creator | Ferenczi, G. |
| description | The light output degradation of commercial VPE GaP:N LED's was studied by monitoring minority carrier lifetime and deep level spectra. It was found that the decrease of the quantum efficiency can be completely accounted for by the formation of a nonradiative recombination center T 6 . T 6 is identified as a vacancy cluster, a model suggested by the formation-annihilation properties of this deep level. |
| doi_str_mv | 10.1109/T-ED.1981.20358 |
| format | Article |
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It was found that the decrease of the quantum efficiency can be completely accounted for by the formation of a nonradiative recombination center T 6 . T 6 is identified as a vacancy cluster, a model suggested by the formation-annihilation properties of this deep level.</abstract><pub>IEEE</pub><doi>10.1109/T-ED.1981.20358</doi><tpages>4</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1981-04, Vol.28 (4), p.421-424 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| title | Degradation induced formation of extended defects in GaP:N LED's |
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