Degradation induced formation of extended defects in GaP:N LED's
The light output degradation of commercial VPE GaP:N LED's was studied by monitoring minority carrier lifetime and deep level spectra. It was found that the decrease of the quantum efficiency can be completely accounted for by the formation of a nonradiative recombination center T 6 . T 6 is id...
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| Veröffentlicht in: | IEEE transactions on electron devices 1981-04, Vol.28 (4), p.421-424 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | The light output degradation of commercial VPE GaP:N LED's was studied by monitoring minority carrier lifetime and deep level spectra. It was found that the decrease of the quantum efficiency can be completely accounted for by the formation of a nonradiative recombination center T 6 . T 6 is identified as a vacancy cluster, a model suggested by the formation-annihilation properties of this deep level. |
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| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1981.20358 |